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Proceedings Paper

Etching of dual-damascene oxide structures in a medium-density oxide etch reactor
Author(s): Eric Wagganer; George Mueller; Stephen F. Clark; Kenneth J. Newton
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Paper Abstract

This paper presents the work done to develop a self-aligned, dual-damascene etch in a medium-density (approximately X 1010 ion/cm3) oxide etch reactor. The systematic study of etch results was guided by the process performance criteria (See Table 1) and wafer material provided by Texas Instruments. This work was performed on a Lam Research Corporation 4520XLETM dual-frequency Reactive Ion Etch (RIE) tool. As shown in Figure 1, RF power applied to the upper electrode at a frequency of 27 MHz primarily serves to generate the medium-density plasma. RF applied to the lower electrode at a frequency of 2 MHz primarily controls the relative ion energy. The final process results indicate feasibility using a process with discrete steps for trench, via and nitride removal portions of the dual damascene structure. (See Figure 2)

Paper Details

Date Published: 4 September 1998
PDF: 5 pages
Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); doi: 10.1117/12.324028
Show Author Affiliations
Eric Wagganer, Lam Research Corp. (United States)
George Mueller, Lam Research Corp. (United States)
Stephen F. Clark, Texas Instruments Inc. (United States)
Kenneth J. Newton, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 3508:
Multilevel Interconnect Technology II
Mart Graef; Divyesh N. Patel, Editor(s)

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