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Proceedings Paper

New process for manufacturing thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing
Author(s): Pierre Boher; Jean-Louis P. Stehle; Jean-Philippe Piel; Eric Fogarassy
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Paper Abstract

Epitaxial Si1-yCy and Si1-x-yGexCy alloy layers are grown on monocrystalline silicon substrates by multiple energy ion implantation of Ge and C into single Si crystals followed by pulse excimer laser annealing. The properties of the alloy layers are determined precisely using spectroscopic ellipsometry (SE), x-ray diffraction (XRD) and Rutherford backscattering (RBS) techniques. We show that annealing energy densities higher than 2 J/cm2 result in monocrystalline epitaxial layers with low quantity of defects. The lattice contraction due to the carbon inclusion increases with the implanted C concentration up to about 1.1%. For higher values a more complex behavior is observed with partial (or total) relaxation of the layer and/or carbide formation. With optimized condition, the growing of pseudomorphic epitaxial layers, from group IV semiconductor alloys was successful on large areas thanks to the high power excimer laser developed at SOPRA (1 J/cm2 over 40 cm2 in one pulse).

Paper Details

Date Published: 4 September 1998
PDF: 9 pages
Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323972
Show Author Affiliations
Pierre Boher, SOPRA S.A. (France)
Jean-Louis P. Stehle, SOPRA S.A. (France)
Jean-Philippe Piel, SOPRA S.A. (France)
Eric Fogarassy, Lab. PHASE-CNRS (France)

Published in SPIE Proceedings Vol. 3506:
Microelectronic Device Technology II
David Burnett; Dirk Wristers; Toshiaki Tsuchiya, Editor(s)

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