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Proceedings Paper

Photochemical etching of the ZnSe surface with chlorine
Author(s): Victor M. Stepanenko; Maria V. Dobrotvorskaya; Pavel V. Mateychenko; Heribert Raaf; Nikolaus Schwentner
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Paper Abstract

Photochemical reactions at the solid surface can be applied for the microstructuring. Photochemical processes have high anisotropy and don't produce radiation defects in surface layers of materials, providing certain advantages compared to ion, plasma and X-ray technologies. At the moment the most of photoexcitation sources use visible near UV photon range. The increasing of photon energy up to VUV by use of synchrotron radiation (SR) or other source leads to diminishing of the microstructure size to 100 nm and rising of the quantum efficiency of the reaction. In this work photochemical reaction of etching of ZnSe has been studied. Surface of ZnSe crystal (110) was irradiated with photons 4.5 eV < hv < 50 eV (SR) in the chlorine atmosphere at room temperature. By means of XPS, SEM, EDS chemical composition and thickness of the reaction products have been defined. It was shown that the reaction products layer contain of ZnCl2 with thickness of 100 nm. Evaluated quantum efficiency was about 1. Further, it was demonstrated the possibility of microstructuring at ZnSe surface by photochemical etching with the use of special masks.

Paper Details

Date Published: 23 September 1998
PDF: 6 pages
Proc. SPIE 3424, Inorganic Optical Materials, (23 September 1998); doi: 10.1117/12.323757
Show Author Affiliations
Victor M. Stepanenko, Institute for Single Crystals (Ukraine)
Maria V. Dobrotvorskaya, Institute for Single Crystals (Ukraine)
Pavel V. Mateychenko, Institute for Single Crystals (Ukraine)
Heribert Raaf, Institut fuer Experimentalphysik (Germany)
Nikolaus Schwentner, Institut fuer Experimentalphysik (Germany)

Published in SPIE Proceedings Vol. 3424:
Inorganic Optical Materials
Alexander J. Marker III, Editor(s)

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