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Proceedings Paper

Ion implantation: an efficient method for doping or fabricating channel chalcogenide glass waveguides
Author(s): Chiara Meneghini; Karine Le Foulgoc; Emile J. Knystautas; Alain Villeneuve; Thierry Cardinal; Kathleen A. Richardson
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Paper Abstract

In this paper we present two different applications of ion implantation in chalcogenide glasses: rare earth doping and channel waveguide fabrication. The luminescence of a neodymium-implanted arsenic tri-sulfide waveguide at 1083 nm is reported. The most efficient pump wavelength is determined to be 818 nm. The dopant distribution following ion implantation is predicted by molecular dynamic simulation and measured by Rutherford Backscattering Spectrometry. This observation of luminescence from rare- earth ion implantation into chalcogenide glass suggest that this technique can be useful for rare-earth doped devices. A study of neodymium luminescence peak power as a function of dopant concentration is reported. The second application of ion implantation is in the fabrication of channel waveguides by helium implantation.

Paper Details

Date Published: 17 September 1998
PDF: 8 pages
Proc. SPIE 3413, Materials Modification by Ion Irradiation, (17 September 1998); doi: 10.1117/12.321943
Show Author Affiliations
Chiara Meneghini, COPL/Univ. Laval (Canada)
Karine Le Foulgoc, COPL/Univ. Laval (Canada)
Emile J. Knystautas, COPL/Univ. Laval (Canada)
Alain Villeneuve, COPL/Univ. Laval (Canada)
Thierry Cardinal, CREOL/Univ. of Central Florida (France)
Kathleen A. Richardson, CREOL/Univ. of Central Florida (United States)

Published in SPIE Proceedings Vol. 3413:
Materials Modification by Ion Irradiation
Emile J. Knystautas, Editor(s)

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