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Proceedings Paper

Effect of ion mass on the irradiation-induced intermixing of GaAs/AlGaAs quantum wells
Author(s): Richard D. Goldberg; Hark Hoe Tan; M. B. Johnston; Chennupati Jagadish; Michael Gal; Ian V. Mitchell
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Paper Abstract

A comparison has been made of the shifts induced in the photoluminescence (PL) emission wavelength of a GaAs/AlGaAs multiple quantum well (QW) structure following irradiation with H, He and As ions. Ions energies and fluences were chosen to produce matching numbers and distributions of lattice atom displacements across the structure. Samples were then annealed at 900 degrees C for 30s to intermix the QWs and low temperature photoluminescence as used to measure the shifts in the QW bandgap energies. At common concentration of atomic displacements, the PL blueshift increased with the mass of the implanted ion. For these anneal parameters, saturation of the blueshift from the narrowest QW was observed in all three irradiation at an average vacancy production concentration of approximately 1022 cm-3. No significant difference in PL shifts was found when the irradiations were performed at 200 degrees C sample temperature.

Paper Details

Date Published: 17 September 1998
PDF: 6 pages
Proc. SPIE 3413, Materials Modification by Ion Irradiation, (17 September 1998); doi: 10.1117/12.321942
Show Author Affiliations
Richard D. Goldberg, Univ. of Western Ontario (United Kingdom)
Hark Hoe Tan, Australian National Univ. (Australia)
M. B. Johnston, Univ. of New South Wales (Australia)
Chennupati Jagadish, Australian National Univ. (Australia)
Michael Gal, Univ. of New South Wales (Australia)
Ian V. Mitchell, Univ. of Western Ontario (Canada)

Published in SPIE Proceedings Vol. 3413:
Materials Modification by Ion Irradiation
Emile J. Knystautas, Editor(s)

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