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Proceedings Paper

Advanced polysilicon TFT technology for active matrix organic light-emitting diode displays
Author(s): Miltiadis K. Hatalis; Mark J. Stewart; Robert S. Howell
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Paper Abstract

This work discusses the features of a low temperature polysilicon thin film transistor (TFT) technology suitable for application in the new Active Matrix Organic Light Emitting Diode (AMOLED) displays. The most important facet of this work is the preparation of polysilicon films by the method of solid phase crystallization of amorphous silicon films using rapid thermal processing (RTP). It is shown that amorphous silicon films can be crystallized by RTP at temperatures compatible with glass substrates yielding polysilicon TFT performance suitable for AMOLED. The use of transition metals for achieving aluminum lines with no hillock and low contact resistance to indium tin oxide, two important features for AMOLED displays is discussed.

Paper Details

Date Published: 14 September 1998
PDF: 10 pages
Proc. SPIE 3363, Cockpit Displays V: Displays for Defense Applications, (14 September 1998); doi: 10.1117/12.321781
Show Author Affiliations
Miltiadis K. Hatalis, Lehigh Univ. (United States)
Mark J. Stewart, Lehigh Univ. (United States)
Robert S. Howell, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 3363:
Cockpit Displays V: Displays for Defense Applications
Darrel G. Hopper, Editor(s)

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