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Proceedings Paper

Cryogenic MOST for focal plane readout electronics
Author(s): Nikolai E. Bock; Evgeny I. Cherepov
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Paper Abstract

At temperatures below 20K conventional MOS transistors continue to work, but excessive noise and current-voltage anomalies such as kink effect and hysteresis appear on their output characteristics because of carrier freeze-out in silicon. A cryogenic MOS transistor was proposed to prevent the anomalies. The paper describes the cryogenic transistor structure, its performance and the result of its application in a 64 by 1 CMOS multiplexer.

Paper Details

Date Published: 14 September 1998
PDF: 6 pages
Proc. SPIE 3360, Infrared Readout Electronics IV, (14 September 1998); doi: 10.1117/12.321757
Show Author Affiliations
Nikolai E. Bock, Institute of Semiconductor Physics (Russia)
Evgeny I. Cherepov, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 3360:
Infrared Readout Electronics IV
Bedabrata Pain; Terrence S. Lomheim, Editor(s)

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