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Proceedings Paper

1.3-um InGaAsP/InP strained-layer multiquantum well complex-coupled distributed feedback laser
Author(s): Bo Chen; Wei Wang; Xiaojie Wang; Jingyuan Zhang; Hongliang Zhu; Fan Zhou
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Paper Abstract

1.3 micrometers strained-layer multi-quantum wells complex-coupled distributed feedback lasers with a wide temperature range of 20 to 100 degree(s)C are reported. The low threshold current of 10 mA and high single-facet slope efficiency of 0.3 mW/mA were obtained for an as cleaved device. The single mode yield was as high as 80%.

Paper Details

Date Published: 19 August 1998
PDF: 4 pages
Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); doi: 10.1117/12.319626
Show Author Affiliations
Bo Chen, Institute of Semiconductors (China)
Wei Wang, Institute of Semiconductors (China)
Xiaojie Wang, Institute of Semiconductors (United States)
Jingyuan Zhang, Institute of Semiconductors (China)
Hongliang Zhu, Institute of Semiconductors (China)
Fan Zhou, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3547:
Semiconductor Lasers III
Qiming Wang; Lawrence J. Davis; Siamak Forouhar, Editor(s)

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