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Proceedings Paper

Femtosecond transient transmission studies of GaAs thin film
Author(s): Feipeng Pi
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Paper Abstract

Femtosecond transient transmission measurements are used to investigate the scattering and relaxation dynamics of nonequilibrium carriers in GaAs thin film. With a nonequilibrium energy-balance model, the cooling process of hot carriers via emission of phonons is simulated. It is found that, the fitting parameter (lambda) is close to the Frohlich constant (alpha) F qualitatively and decreases with increasing excited carrier density. It reveals that the carrier-LO phonon coupling is the main way of the cooling of hot carriers and the coupling will be weaken by the nonequilibrium phonon effect.

Paper Details

Date Published: 14 August 1998
PDF: 4 pages
Proc. SPIE 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II, (14 August 1998); doi: 10.1117/12.318244
Show Author Affiliations
Feipeng Pi, Guangzhou Normal Univ. (China)


Published in SPIE Proceedings Vol. 3556:
Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II
Chuangtian Chen, Editor(s)

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