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Proceedings Paper

Analysis of the quantum efficiency of a GaInAsSb photovoltaic detector
Author(s): Yuan Tian; Tianming Zhou; BaoLin Zhang; Hong Jiang; Yixin Jin
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Paper Abstract

In this paper, the theoretical analysis of the quantum efficiency in an n+-p GaInAsSb IR photovoltaic detector is presented. The investigations of material parameters and the direction of the incident light are carried out for the near room temperature and 2.5 micrometers wavelength. The analysis results show that the direction of the incident light effects on the quantum efficiency. In addition, the quantum efficiency strongly depends on the carrier concentration in the p region. Moreover, other material parameters also effect on the quantum efficiency.

Paper Details

Date Published: 11 August 1998
PDF: 4 pages
Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); doi: 10.1117/12.318065
Show Author Affiliations
Yuan Tian, Changchun Institute of Physics (China)
Tianming Zhou, Changchun Institute of Physics (China)
BaoLin Zhang, Changchun Institute of Physics (China)
Hong Jiang, Changchun Institute of Physics (China)
Yixin Jin, Changchun Institute of Physics (China)

Published in SPIE Proceedings Vol. 3553:
Detectors, Focal Plane Arrays, and Imaging Devices II
Pingzhi Liang; Marc Wigdor; William G. D. Frederick, Editor(s)

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