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Proceedings Paper

Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures
Author(s): Junjie Si; Qingqing Yang; Hongjie Wang; Qiming Wang; Liwei Guo; Junming Zhou
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Paper Abstract

Comparative electroluminescence (EL) and photoluminescence (PL) measurements were performed on Si/Si0.6Ge0.4 self-assembly quantum dots (QDs) structures. The samples were grown pseudomorphically by molecular beam epitaxy, and PIN diodes for electroluminescence were fabricated. Assisted TEM pictures shows the SiGe self-assembly QDs are plate-like. And it showed that the diameters of QDs are in range from 40 nm to 140 nm with the most in 120 nm. Both EL and PL has a wide luminescence peak due to wide distribution of QDs dimensions. At low temperature (T equals 14 K), EL peak has a red shift compared to the corresponding PL peak. Its full-width at half- maximum (FWHM) is about 97 meV, a little smaller than that of corresponding PL peak. The reasons of position and FWHM changes of EL peak from QDs have been discussed.

Paper Details

Date Published: 12 August 1998
PDF: 4 pages
Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317998
Show Author Affiliations
Junjie Si, Institute of Semiconductors (China)
Qingqing Yang, Institute of Semiconductors (China)
Hongjie Wang, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)
Liwei Guo, Institute of Physics (China)
Junming Zhou, Institute of Physics (China)

Published in SPIE Proceedings Vol. 3551:
Integrated Optoelectronics II
BingKun Zhou; Ray T. Chen, Editor(s)

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