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Proceedings Paper

Growth factor of Fe-doped semi-insulating InP by LP-MOCVD
Author(s): Xuejin Yan; Hongliang Zhu; Wei Wang; Guoyang Xu; Fan Zhou; Chaohua Ma; Xiaojie Wang; Huijiang Tian; Jingyuan Zhang; Rong Han Wu; Qiming Wang
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Paper Abstract

The semi-insulating InP has been grown using ferrocene as a dopant source by low pressure MOCVD. Fe doped semi-insulating InP material whose resistivity is equal to 2.0 X 108(Omega) *cm and the breakdown field is greater than 4.0 X 104Vcm-1 has been achieved. It is found that the magnitude of resistivity increases with growing pressure enhancement under keeping TMIn, PH3, ferrocene [Fe(C5H5)2] flow constant at 620 degrees Celsius growth temperature. Moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. It is estimated that active Fe doping efficiency, (eta) , is equal to 8.7 X 10-4 at 20 mbar growth pressure and 620 degrees Celsius growth temperature by the comparison of calculated and experimental results.

Paper Details

Date Published: 12 August 1998
PDF: 4 pages
Proc. SPIE 3551, Integrated Optoelectronics II, (12 August 1998); doi: 10.1117/12.317966
Show Author Affiliations
Xuejin Yan, Institute of Semiconductors (China)
Hongliang Zhu, Institute of Semiconductors (China)
Wei Wang, Institute of Semiconductors (China)
Guoyang Xu, Institute of Semiconductors (China)
Fan Zhou, Institute of Semiconductors (China)
Chaohua Ma, Institute of Semiconductors (China)
Xiaojie Wang, Institute of Semiconductors (United States)
Huijiang Tian, Institute of Semiconductors (China)
Jingyuan Zhang, Institute of Semiconductors (China)
Rong Han Wu, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3551:
Integrated Optoelectronics II
BingKun Zhou; Ray T. Chen, Editor(s)

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