Carbon nitride films were synthesized by active atomic nitrogen beams intersecting pulsed laser plumes at the substrates without heating. The properties of the films were studied by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and Raman spectroscopy. AES and XPS analysis show that the as- deposited carbon nitride films are mainly composed of [N] and [C], and the composition ratios ([N]/[C]) increase as the pulsed laser repetition rate and energy. XRD results show that several diffraction peaks attributed to (beta) -C₃N₄ phase were identified. Raman spectra show that several prominent bands related to C-N bondings could be observed.

Date Published: 15 August 1998
PDF: 10 pages
Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); doi: 10.1117/12.317911

Published in SPIE Proceedings Vol. 3550:
Laser Processing of Materials and Industrial Applications II
ShuShen Deng; S. C. Wang, Editor(s)