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Proceedings Paper

Microstructure and composition of mixed GaAsN/GaN films
Author(s): Richard J. Michalak; Jong Won Lee; William J. Schaff; Joseph M. Ballantyne; Kurt A. Johnson
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Paper Abstract

Future Air Force RF links will require the speed, cost, reliability, weight, and EMI-immunity advantages of a monolithically integrated optical-electronic technology. GaAsN is a direct band-gap compound semiconductor material which potentially can be lattice-matched to silicon. This would permit true monolithically integrated optical-electronic circuits to be fabricated. To date, films of GaAsN grown by MBE under most conditions exhibit segregation into coexisting GaAsN, GaN and GaAs phases. The composition, microstructure, and signatures of these films in X-ray diffraction, Auger, and TEM analyses are reported. The possible ordering of these films is analyzed.

Paper Details

Date Published: 31 July 1998
PDF: 11 pages
Proc. SPIE 3384, Photonic Processing Technology and Applications II, (31 July 1998); doi: 10.1117/12.317662
Show Author Affiliations
Richard J. Michalak, Air Force Research Lab. (United States)
Jong Won Lee, Cornell Univ. (United States)
William J. Schaff, Cornell Univ. (United States)
Joseph M. Ballantyne, Cornell Univ. (United States)
Kurt A. Johnson, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 3384:
Photonic Processing Technology and Applications II
Andrew R. Pirich; Michael A. Parker, Editor(s)

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