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Proceedings Paper

Short-wavelength infrared HgCdTe photovoltaic detectors fabricated by boron implantation
Author(s): Jun Zhao; Qin Wang; Jiaxiong Fang
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Paper Abstract

Short wavelength (SWIR) devices have been fabricated using boron implantation. The capacitance-voltage measurement has been used to examine the junction doping profiles. The junction doping profile can be n/n-/p type or n/p type depending on the p-side doping concentration. Only the junctions made on the lightly doped substrates show the n/n-/p type abrupt junction, with the n- region in the low 1 X 1014 cm-3 range. On the heavily doped substrates, we obtain the n/p type graded junctions. The peak detectivity D*(lambda p) performance at room temperature of the large area (Aj equals 5.9 mm2) detector was about 2.6 X 1011 cm-Hz1/2/W at the zero bias. Higher D*(lambda p) performance about 1.4 X 1012 cm-Hz1/2/W was obtained on smaller area detectors at 250 K.

Paper Details

Date Published: 22 July 1998
PDF: 5 pages
Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317631
Show Author Affiliations
Jun Zhao, Shanghai Institute of Technical Physics (United States)
Qin Wang, Shanghai Institute of Technical Physics (China)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 3379:
Infrared Detectors and Focal Plane Arrays V
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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