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Proceedings Paper

Optimization of the MBE growth of Hg1-xCdxTe for advanced infrared applications
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Paper Abstract

Hg1-xCdxTe films with x values varying from 0.2 to 0.23 have been grown and characterized. N-type carrier concentrations in the range of 1 X 1015 cm-3 to 3 X 1015 cm-3 have been obtained. Hall effect measurements before and after anneals at 250 degrees Celsius have led to the evaluation of the Hg vacancy concentration in the samples. Dislocation density less than 105 cm-2 and X-ray rocking curve width less than 25 arc- secs measured in some of the films attests to the excellent crystallinity of the material.

Paper Details

Date Published: 22 July 1998
PDF: 5 pages
Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); doi: 10.1117/12.317625
Show Author Affiliations
Honnavalli R. Vydyanath, Avyd Devices, Inc. (United States)
Priyalal S. Wijewarnasuriya, Univ. of Illinois/Chicago (United States)
Sivalingam Sivananthan, Univ. of Illinois/Chicago (United States)
Vaidya Nathan, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 3379:
Infrared Detectors and Focal Plane Arrays V
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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