Proceedings Paper
Carrier lifetime calculations and modulation response of intersubband semiconductor lasers| Format | Member Price | Non-Member Price |
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Paper Abstract
A self-consistent rate equation analysis of the direct current modulation response is performed through a calculation of the relevant carrier and tunneling lifetimes for a prototype triple quantum well structure suitable for incorporation in intersubband lasers. Opportunities for accessing predicted THz modulation response capabilities in such devices are examined. The intersubband optical gain spectra of these devices are investigated.
Paper Details
Date Published: 7 July 1998
PDF: 12 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316691
Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)
PDF: 12 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316691
Show Author Affiliations
C. Y. L. Cheung, Univ. of Wales/Bangor (United Kingdom)
Keith Alan Shore, Univ. of Wales/Bangor (United Kingdom)
Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)
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