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Proceedings Paper

Theoretical and experimental analysis of the spontaneous emission and threshold current of edge-emitting Bragg microcavity laser structures
Author(s): Graham M. Berry; Gareth D. Lewis; Huw D. Summers; Peter Blood; John Stuart Roberts
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Paper Abstract

Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Distributed Bragg microcavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130 K there is an enhancement. These changes to the spontaneous emission process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the microcavity on the field-dipole interaction.

Paper Details

Date Published: 7 July 1998
PDF: 12 pages
Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); doi: 10.1117/12.316687
Show Author Affiliations
Graham M. Berry, Cardiff Univ. of Wales (United Kingdom)
Gareth D. Lewis, Cardiff Univ. of Wales (Italy)
Huw D. Summers, Cardiff Univ. of Wales (United Kingdom)
Peter Blood, Cardiff Univ. of Wales (United Kingdom)
John Stuart Roberts, Univ. of Sheffield (United Kingdom)

Published in SPIE Proceedings Vol. 3283:
Physics and Simulation of Optoelectronic Devices VI
Marek Osinski; Peter Blood; Akira Ishibashi, Editor(s)

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