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Proceedings Paper

UV radiation sensors with unitary and binary superficial barrier
Author(s): Valerian Dorogan; Tatiana Vieru; V. Kosyak; I. Damaskin; F. Chirita
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Paper Abstract

UV radiation sensors with unitary and binary superficial barrier, made on the basis of GaP - SnO2 and GaAs - AlGaAs - SnO2 heterostructures, are presented in the paper. Technological and constructive factors, which permit to realize a high conversion efficiency and to exclude the influence of visible spectrum upon the photoanswer, are analyzed. It was established that the presence of an isotypical superficial potential barrier permits to suppress the photoanswer component formed by absorption of visible and infrared radiation in semiconductor structure bulk.

Paper Details

Date Published: 2 July 1998
PDF: 6 pages
Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); doi: 10.1117/12.312705
Show Author Affiliations
Valerian Dorogan, Technical Univ. of Moldova (Moldova)
Tatiana Vieru, Technical Univ. of Moldova (Moldova)
V. Kosyak, Technical Univ. of Moldova (Moldova)
I. Damaskin, Institute of Applied Physics (Moldova)
F. Chirita, Technical Univ. of Moldova (Moldova)

Published in SPIE Proceedings Vol. 3405:
ROMOPTO '97: Fifth Conference on Optics
Valentin I. Vlad; Dan C. Dumitras, Editor(s)

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