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Proceedings Paper

Minimizing photoresist dispense volumes on organic antireflective layers: the effects of chemistry and coating methodology on defect size and density
Author(s): Andrew E. Bair; Audrey M. Davis; Bradley D. Lantz; Jeffrey R. Johnson; Charles R. Spinner III; Steve Tanner; Von Jerick T. Marcos; Hiroshi Matsui
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Paper Abstract

Preventing the formation of defects at the interface between an organic bottom-side anti-reflective coating and a photoresist is problematic with the use of these films. These defects have been attributed to different sources, such as mismatch of surface free energies, trapped water, etc., and have been shown to be highly dependent on the rotational speed of the wafer during the photoresist dispense step. Extensive work has also been done by most semiconductor manufacturers to reduce photoresist dispense volumes during wafer processing. Due to significant increases in photoresist cost for 248 nm lithography, this issue has become increasingly important. This paper shows that defect prevention and resist volume reduction can be accomplished with a fast, high pressure dispense of the photoresist.

Paper Details

Date Published: 29 June 1998
PDF: 6 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312463
Show Author Affiliations
Andrew E. Bair, SGS-Thomson Microelectronics (United States)
Audrey M. Davis, SGS-Thomson Microelectronics (United States)
Bradley D. Lantz, SGS-Thomson Microelectronics (United States)
Jeffrey R. Johnson, SGS-Thomson Microelectronics (United States)
Charles R. Spinner III, SGS-Thomson Microelectronics (United States)
Steve Tanner, DNS Electronics (United States)
Von Jerick T. Marcos, DNS Electronics (United States)
Hiroshi Matsui, DNS Electronics (United States)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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