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Proceedings Paper

Standard developer available ArF resist and performance
Author(s): Yasunori Uetani; Hiroaki Fujishima; Yoshiko Miya; Ichiki Takemoto
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Paper Abstract

Alicyclic groups are preferable resin components of ArF resists due to better dry-etching resistance and higher transparency at 193 nm. On the other hand, Alicyclic groups bring poor adhesion of ArF resists during wet development, because of their higher hydrophobic nature. To avoid the peeling problem diluted developer has been suggested to use. However, the compatibility with existing standard developer of i-line and KrF resists is necessary for the mass production. In this paper we compared two kinds of resists for the standard developer (TMAH 2.38%) application. The former has AdCEE unit and norbornene derivative/maleic anhydride alternating copolymer, together with relatively weak organic acid generating PAG. The latter having 2MAdMA/GBLMA copolymer and onium salt PAG shows better lithographic performance.

Paper Details

Date Published: 29 June 1998
PDF: 8 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312445
Show Author Affiliations
Yasunori Uetani, Sumitomo Chemical Co., Ltd. (Japan)
Hiroaki Fujishima, Sumitomo Chemical Co., Ltd. (Japan)
Yoshiko Miya, Sumitomo Chemical Co., Ltd. (Japan)
Ichiki Takemoto, Sumitomo Chemical Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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