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Proceedings Paper

Comparisons of critical parameters for high- and low-activation-energy deep-UV photoresists
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Paper Abstract

A major factor in the substantial improvement in the performance and environmental stability of DUV chemical amplified resists involved a change in the chemistry of the protecting group. A divergence of resist design has recently occurred, leading to two completely different resist classes, each with its promises and problems. These new resists (once again based on hydroxystyrene copolymers and terpolymers) can be grouped by activation energy. In this paper the authors will attempt to answer these questions and perhaps highlight areas of additional concern. Results from our investigations of two photoresists of either high or low activation energy system will be presented. Critical parameters such as overall process windows for sub-200 nm lithography variation with PEB temperature (linewidth/ degree(s)C), PEB delay, line slimming, etch rates and bottle stability will be discussed.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312425
Show Author Affiliations
Will Conley, Cypress Semiconductor Corp. (United States)
Carl P. Babcock, Cypress Semiconductor Corp. (United States)
Nigel R. Farrar, Hewlett-Packard Co. (United States)
Hua-Yu Liu, Hewlett-Packard Co. (United States)
Bill Peterson, JSR Microelectronics, Inc. (United States)
Kazuo Taira, JSR Microelectronics, Inc. (United States)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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