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Proceedings Paper

ArF single-layer photoresists based on alkaline-developable ROMP-H resin
Author(s): Mitsuhito Suwa; Haruo Iwasawa; Toru Kajita; Masafumi Yamamoto; Shin-Ichiro Iwanaga
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Paper Abstract

Novel ArF single layer photoresists, which are based on new type of alicyclic polymers prepared by ROMP (Ring Opening Metathesis Polymerization), are reported. Norbornenes with ester group were mainly used as monomers for polymerization. The prepared resins were potentially endowed with alkaline developability by hydrolyzing the ester groups. Hydrolyzed resins showed developability to conventional aqueous TMAH developer. The polymerized resins were hydrogenated onto the double bonds in the polymer main chain in order to improve the transparency of the resins at 193-nm. The hydrogenated ROMP (ROMP-H) resins showed high transparency at 193-nm and equivalently good etch resistance to that of KrF deep UV resist. The formulated resist with a ROMP-H resin and triphenyl sulfonium trifluoromethanesulfonate resolved 0.28- micrometers L/S in KrF exposure (N.A. equals 0.50) and 0.225-micrometers L/S in ArF exposure (N.A. equals 0.55).

Paper Details

Date Published: 29 June 1998
PDF: 6 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312419
Show Author Affiliations
Mitsuhito Suwa, Japan Synthetic Rubber Corp. (Japan)
Haruo Iwasawa, Japan Synthetic Rubber Corp. (Japan)
Toru Kajita, Japan Synthetic Rubber Corp. (Japan)
Masafumi Yamamoto, Japan Synthetic Rubber Corp. (Japan)
Shin-Ichiro Iwanaga, Japan Synthetic Rubber Corp. (Japan)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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