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Proceedings Paper

Modeling parameter extraction for DNQ-novolak thick film resists
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Paper Abstract

Optical lithography with special thick film DNQ-novolac photoresists have been practiced for many years to fabricate microstructures that require feature heights ranging from several to hundreds of microns such as thin film magnetic heads. It is common in these thick film photoresist systems to observe interesting non-uniform profiles with narrow regions near the top surface of the film that transition into broader and more concave shapes near the bottom of the resist profile. A number of explanations have been proposed for these various observations including the formation of `dry skins' at the resist surface and the presence of solvent gradients in the film which serve to modify the local development rate of the photoresist. There have been few detailed experimental studies of the development behavior of thick films resists. This has been due to part to the difficulty in studying these films with conventional dissolution rate monitors (DRMs). In general, this lack of experimental data along with other factors has made simulation and modeling of thick film resist performance difficult. As applications such as thin film head manufacturing drive to smaller features with higher aspect ratios, the need for accurate thick film simulation capability continues to grow. A new multi-wavelength DRM tool has been constructed and used in conjunction with a resist bleaching tool and rigorous parameter extraction techniques to establish exposure and development parameters for two thick film resists, AZTM 4330-RS and AZTM 9200. Simulations based on these parameters show good agreement to resist profiles for these two resists.

Paper Details

Date Published: 29 June 1998
PDF: 12 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312415
Show Author Affiliations
Clifford L. Henderson, Univ. of Texas/Austin (United States)
Steven A. Scheer, Univ. of Texas/Austin (United States)
Pavlos C. Tsiartas, Univ. of Texas/Austin (United States)
Benjamen M. Rathsack, Univ. of Texas/Austin (United States)
John P. Sagan, Clariant Corp. (United States)
Ralph R. Dammel, Clariant Corp. (United States)
Andreas Erdmann, Fraunhofer-Institute for Silicon Technology (Germany)
C. Grant Willson, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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