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Proceedings Paper

Progress in 193-nm top-surface imaging process development
Author(s): John M. Hutchinson; Veena Rao; Guojing Zhang; Adam Richard Pawloski; Carlos A. Fonseca; Janet Chambers; Susan M. Holl; Siddhartha Das; Craig C. Henderson; David R. Wheeler
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Paper Abstract

The maturity and acceptance of top surface imaging (TSI) technology has been hampered by several factors including inadequate resist sensitivity and silylation contrast, defects and line edge roughness and equipment performance/reliability issues. We found that the use of a chemically amplified resist can improve the sensitivity by a factor of 1.5 - 2X, without compromising line edge roughness. While the post-silylation contrast of this chemically amplified material is poor ((gamma) < 1), the post-etch contrast is excellent ((gamma) >> 10) and the use of advanced silylation chemistries (disilanes) can further reduce the dose-to-size and increase the contrast. We have also demonstrated that using sulfur dioxide in the plasma etch process can improve the sidewall passivation of the resist lines, thus reducing the overall line edge roughness. Finally, we have been able to successfully use the TSI process to pattern deep sub-micron polysilicon and metal patterns.

Paper Details

Date Published: 29 June 1998
PDF: 11 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312405
Show Author Affiliations
John M. Hutchinson, Intel Corp. (United States)
Veena Rao, Intel Corp. (United States)
Guojing Zhang, Intel Corp. (United States)
Adam Richard Pawloski, Intel Corp. (United States)
Carlos A. Fonseca, Intel Corp. (United States)
Janet Chambers, Intel Corp. (United States)
Susan M. Holl, Intel Corp. (United States)
Siddhartha Das, Intel Corp. (United States)
Craig C. Henderson, Sandia National Labs. (United States)
David R. Wheeler, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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