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Proceedings Paper

Lithographic performance of a dry-etch stable methacrylate resist at 193 nm
Author(s): Ralph R. Dammel; Stanley A. Ficner; Joseph E. Oberlander; Axel Klauck-Jacobs; Munirathna Padmanaban; Dinesh N. Khanna; Dana L. Durham
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Paper Abstract

High resolution performance down to the 0.13 micrometers level is demonstrated in a methacrylate resist with pendent polycyclic side groups. The best performance is achieved with a bottom coat although interactions with the resist were still observed which led to the presence of scum in fine lines and to a large dose change relative to silicon. The demonstrated dry etch rate of the resist was found to be about 10% higher than APEX-E; predictions based on the ring parameter would have led us to expect a more favorable etch rate. The observed discrepancy has led us to speculate on possible exposure of the resist by the plasma environment and loss of the etch resistance polycyclic unit through evaporation.

Paper Details

Date Published: 29 June 1998
PDF: 8 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312393
Show Author Affiliations
Ralph R. Dammel, Clariant Corp. (United States)
Stanley A. Ficner, Clariant Corp. (United States)
Joseph E. Oberlander, Clariant Corp. (United States)
Axel Klauck-Jacobs, Clariant Corp. (United States)
Munirathna Padmanaban, Clariant Corp. (United States)
Dinesh N. Khanna, Clariant Corp. (United States)
Dana L. Durham, Clariant Corp. (United States)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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