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Proceedings Paper

New method of determination of the photoresist Dill parameters using reflectivity measurements
Author(s): Patrick Schiavone; Stephane Bach
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Paper Abstract

In this paper, we describe a new methodology for the determination of Dill parameters based on reflectivity measurements. In opposition to previous methods, samples are produced using the usual process steps. Silicon wafers and standard photoresist coating procedures are used. Moreover, reflectivity measurements can be performed on any reflectometer, a piece of equipment universally present in an industrial environment. A fitting procedure is performed on the reflectivity data in order to extract the ABC parameters. The delicate steps of the methods are described in the paper. Comparison with other exposure parameter extraction methods on I line resist shows good agreement. Dependence between exposure parameters and development parameter extraction is also discussed. It is shown that several empirical parameter sets can be equivalent, at least from the simulation point of view.

Paper Details

Date Published: 29 June 1998
PDF: 7 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312378
Show Author Affiliations
Patrick Schiavone, France Telecom-CNET (France)
Stephane Bach, France Telecom-CNET (France)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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