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Proceedings Paper

Rapid simulation of silylation and the role of physical mechanisms in profile shapes
Author(s): Marco Antonio Zuniga; Ebo H. Croffie; Andrew R. Neureuther
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Paper Abstract

A rigorous simulator which includes the highly nonlinear diffusion and stress dependent reactions present in silylation is presented and used to assess the role of the key physical parameters in the resultant profile shapes for silicon uptake. The silylation model implemented includes (1) the relaxation of the polymer during silylation, (2) the resultant increase in the diffusivity of the silylating agent as a function of the resist matrix expansion, as well as a (3) local reaction rate retardation due to stresses associated with nonuniform resist swelling. The resulting differential equations are solved utilizing a Krylov subspace Newton convergence accelerator. A greater than one order of magnitude decrease is observed in simulation times as compared to traditional numerical techniques. Simulations of silylated profiles with various silylation uptake regimes elucidate the interplay of the physical mechanisms model in determining final silylation depth and sidewall angle.

Paper Details

Date Published: 29 June 1998
PDF: 14 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312366
Show Author Affiliations
Marco Antonio Zuniga, Univ. of California/Berkeley (United States)
Ebo H. Croffie, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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