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Proceedings Paper

Recent advantages of bilevel resists based on silsesquioxane for ArF lithography
Author(s): Taku Morisawa; Nobuyuki N. Matsuzawa; Shigeyasu Mori; Yuko Kaimoto; Masayuki Endo; Takeshi Ohfuji; Koichi Kuhara; Masaru Sasago
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Paper Abstract

We evaluated three chemically amplified positive-tone resists which are mainly based on cyclo-hexyl-carboxylic- acid-silsesquioxane. A resist had a good resolution capability of K1 equals 0.435 and a process window of 0.4 micrometers depth of focus at 0.15 micrometers L/S pattern, however its dissolution characteristics was poor. The resist that was improved the resistance to aqueous base developer, had an excellent resolution capability of K1 equals 0.404. It had a permissive sensitivity of 13 mJ/cm2. The bilayer pattern profile dependencies on the transparency of the upper layer resist and the line edge roughness of the resist before and after the dry-development process were also examined. These results showed the applicability of the silsesquioxane based resist to the bilayer resist process for ArF lithography.

Paper Details

Date Published: 29 June 1998
PDF: 9 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312360
Show Author Affiliations
Taku Morisawa, Association of Super-Advanced Electronics Technologies (Japan)
Nobuyuki N. Matsuzawa, Association of Super-Advanced Electronics Technologies (Japan)
Shigeyasu Mori, Association of Super-Advanced Electronics Technologies (Japan)
Yuko Kaimoto, Association of Super-Advanced Electronics Technologies (Japan)
Masayuki Endo, Association of Super-Advanced Electronics Technologies (Japan)
Takeshi Ohfuji, Association of Super-Advanced Electronics Technologies (Japan)
Koichi Kuhara, Association of Super-Advanced Electronics Technologies (Japan)
Masaru Sasago, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)

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