A high-silicon-concentration top surface imaging (TSI) process for 193-nm lithography has been developed using vapor phase silylation, using dimethylaminopentamethyldisiloxane as a silylation agent and polydihydroxystyrene as a resist material. The etching rate of silylated resist can be explained by the relationship between the silicon content, the decomposition temperature, and the density. The pattern profile of the new TSI process can resolve 0.14 micrometers L/S. Although silylated layer flow occurs in a process below the glass transition temperature, the flow problem can be resolved by using a chemically amplified resist.

Date Published: 29 June 1998
PDF: 8 pages
Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); doi: 10.1117/12.312359

Published in SPIE Proceedings Vol. 3333:
Advances in Resist Technology and Processing XV
Will Conley, Editor(s)