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Proceedings Paper

THz generation from photoconductive switches fabricated by using an atomic force microscope
Author(s): Taro Itatani; Tadashi Nakagawa
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Paper Abstract

We have proposed and realized a structure of insulator-gap photoconductive switches by using an atomic force microscope (AFM). The insulator-gap structure prevents discharge in a photoconductive gap, to realize strong electric field in photo-absorbing region. We have made photoconductive switches with a gap of 43 nm and 100 nm. We also made multiple gap structures to reduce dark current. Ultrafast response for transmission modes have been estimated by the electro-optic (EO) sampling which can measure vector components of electric field. The radiation modes from the photoconductive switches with antenna structures have been measured by a Fourier transform polarizing interferometer.

Paper Details

Date Published: 8 July 1998
PDF: 8 pages
Proc. SPIE 3269, Commercial Applications of Ultrafast Lasers, (8 July 1998); doi: 10.1117/12.312338
Show Author Affiliations
Taro Itatani, Electrotechnical Lab. (Japan)
Tadashi Nakagawa, Electrotechnical Lab. (Japan)

Published in SPIE Proceedings Vol. 3269:
Commercial Applications of Ultrafast Lasers
Murray K. Reed, Editor(s)

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