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Proceedings Paper

Homoepitaxial growth of InGaN/GaN double-heterostructure light-emitting diode by low-pressure MOCVD
Author(s): Yoon-Ho Choi; Sung-Woo Kim; Jae Hyung Yi; Tae-Kyung Yoo; Chang-Hee Hong; Sun-Tae Kim
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Paper Abstract

The homoepitaxial growth InGaN/GaN double heterostructure (DH) light emitting diode (LED) by low pressure metalorganic chemical vapor deposition is reported for the first time. Hydride Vapor Phase Epitaxy prepared 350micrometers -thick GaN single crystal was polished down to a surface roughness of 10 angstrom rms to serve as the substrate. The LED exhibited luminous intensity of 850mcd and forward voltage of 5V at a current of 20mA. The peak wavelength and full width at half maximum of electroluminescence were 490nm and 83nm, respectively.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 341903 (22 June 1998); doi: 10.1117/12.311009
Show Author Affiliations
Yoon-Ho Choi, LG Corporate Institute of Technology (South Korea)
Sung-Woo Kim, LG Corporate Institute of Technology (South Korea)
Jae Hyung Yi, LG Corporate Institute of Technology (South Korea)
Tae-Kyung Yoo, LG Corporate Institute of Technology (South Korea)
Chang-Hee Hong, Chonbuk National Univ. (South Korea)
Sun-Tae Kim, Taejon National Univ. of Technology (South Korea)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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