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Proceedings Paper

Surface-emitting lasers for parallel data transmission and data storage
Author(s): Fumio Koyama; Kenichi Iga
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Paper Abstract

Low threshold vertical cavity surface emitting lasers (VCSELs) have been developed for future parallel optoelectronics, including optical interconnects. The research field of surface emitting lasers is growing up rapidly and micro-amperes low threshold devices have been realized. In this paper, we present some of our results on 980 nm GaInAs/GaAs surface emitting lasers for parallel data transmission. Specifically, we describe some attempts to improved device performances, which include low electric resistance p-type DBRs and p-type delta doping in quantum wells. We demonstrate a penalty-free 10 Gbit/s data transmission. Also, VCSELs grown on (311) GaAs substrates have been developed for stable polarization control, which will give us low noise operations. In addition, we discuss a possibility of a novel VCSEL optical head toward Tera bytes optical memories using scanning near-field optics.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190O (22 June 1998); doi: 10.1117/12.311007
Show Author Affiliations
Fumio Koyama, Tokyo Institute of Technology (Japan)
Kenichi Iga, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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