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Proceedings Paper

Temperature-dependence photoreflectance study of InAs/GaAs self-assembled quantum dots
Author(s): Gwo-Jen Jan; S. M. Chang; ChihMing Lai; M. C. Chen; Hao-Hsiung Lin
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Paper Abstract

Temperature dependence photoreflectance has been used to study InAs/GaAs self-assembled quantum dots (QDs). The QDs samples were grown on (100) misoriented 7 degrees toward (110) GaAs semi-insulting substrate by a gas source molecular beam epitaxy with changing V/III ratio. The energy features of PR spectra from QDs and wetting layer (WL) were fitted by the first derivative Gaussian functional form and band-gap feature was fitted by the derivative-like Lorentian line shape function.THE blue-shift of optical transition energies responded from QDs has been characterized. The signals responded from an ultra-thin wetting layer of InAs/GaAs QDs samples and band-gap transition energy from GaAs portions were also observed. It demonstrates that the energy features of PR spectrum responded form QDs and WL section could provide the important information about QDs quality. The results show that the size, uniformity and density of QDs can be improved by the changing V/III ratio.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190M (22 June 1998); doi: 10.1117/12.311005
Show Author Affiliations
Gwo-Jen Jan, Graduate Institute of Electro-optical Engineering (Taiwan) and National Taiwan Univ. (Taiwan)
S. M. Chang, Graduate Institute of Electro-optical Engineering (Taiwan)
ChihMing Lai, Graduate Institute of Electro-optical Engineering (Taiwan)
M. C. Chen, National Taiwan Univ. (Taiwan)
Hao-Hsiung Lin, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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