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Proceedings Paper

High-temperature operation of 650-nm AlGaInP quantum well laser diodes grown by LP-MOCVD
Author(s): Xiaoyu Ma; Qing Cao; Guohong Wang; Liang Guo; Peng Lian; Liming Wang; Xiaoyan Zhang; Yali Yang; Hongqin Zhang; Lianhui Chen
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Paper Abstract

Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C.

Paper Details

Date Published: 22 June 1998
PDF: 0 pages
Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190I (22 June 1998); doi: 10.1117/12.311001
Show Author Affiliations
Xiaoyu Ma, Institute of Semiconductors (China)
Qing Cao, Institute of Semiconductors (China)
Guohong Wang, Institute of Semiconductors (China)
Liang Guo, Institute of Semiconductors (China)
Peng Lian, Institute of Semiconductors (China)
Liming Wang, Institute of Semiconductors (China)
Xiaoyan Zhang, Institute of Semiconductors (China)
Yali Yang, Institute of Semiconductors (China)
Hongqin Zhang, Institute of Semiconductors (China)
Lianhui Chen, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3419:
Optoelectronic Materials and Devices
Marek Osinski; Yan-Kuin Su, Editor(s)

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