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Proceedings Paper

Resist and oxide thickness effect on process window for 0.2-um contact patterns with off-axis illumination and attenuated phase-shift mask
Author(s): Chuen-Huei Yang; Chang-Ming Dai
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Paper Abstract

The resist dimples caused by the sidelobe effect are the unexpected by-products at printing 0.2-micrometer dense contact holes with attenuated phase-shift mask (PSM) and KrF laser stepper. We found that not only the printing bias and duty ratio but also the film thickness of the resist and the oxide layer underneath the resist affect the generation of the dimples. The 0.2-micrometer contact holes on 0.52-micrometer pitch were printed successfully without resist dimples by controlling the mentioned factors. Furthermore, the depth margin of the dimples was accessed in real etching process. The residual resist at dimples was 3150 Angstrom at least after development in order to against the etching process.

Paper Details

Date Published: 29 June 1998
PDF: 6 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310784
Show Author Affiliations
Chuen-Huei Yang, Industrial Technology Research Institute (Taiwan)
Chang-Ming Dai, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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