Proceedings Paper
Characterization of a next-generation step-and-scan system| Format | Member Price | Non-Member Price |
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Paper Abstract
Deep-ultaviolet (DUV) step-and-scan projection systems have been increasing in semiconductor manufacturing importance in recent years. IBM and other semiconductor manufacturers have made substantial use of 0.50 numerical aperture (NA) step-and- scan systems for production resolutions down to approximately 250 nm resolution. This paper describes the initial system characterization and product performance of a next generation, 0.60 NA scanner system in early semiconductor production.
Paper Details
Date Published: 29 June 1998
PDF: 12 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310773
Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)
PDF: 12 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310773
Show Author Affiliations
Timothy J. Wiltshire, IBM Microelectronics Corp. (United States)
Joseph P. Kirk, IBM Microelectronics Corp. (United States)
Donald C. Wheeler, IBM Microelectronics Corp. (United States)
Joseph P. Kirk, IBM Microelectronics Corp. (United States)
Donald C. Wheeler, IBM Microelectronics Corp. (United States)
Christopher Obszarny, IBM Microelectronics Corp. (United States)
James T. Marsh, IBM Microelectronics Corp. (United States)
Donald M. Odiwo, IBM Microelectronics Corp. (United States)
James T. Marsh, IBM Microelectronics Corp. (United States)
Donald M. Odiwo, IBM Microelectronics Corp. (United States)
Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)
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