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Proceedings Paper

Accurate proximity correction method with total-process proximity-based correction factor (TCF)
Author(s): Kohji Hashimoto; Satoshi Usui; Shigeru Hasebe; Masayuki Murota; Takeo Nakayama; Fumitomo Matsuoka; Soichi Inoue; Sachiko Kobayashi; Kazuko Yamamoto
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Paper Abstract

A novel, accurate, one-dimensional process proximity correction method is proposed. The method is based on the relationship between a line width variation and the bias which should be corrected. This relationship is characterized by the Total process proximity-based Correction Factor (TCF) which is defined as the slope of the wafer CD variation curve to the mask design CD under a constant pattern pitch condition. At a TCF greater than 1, patterns should be corrected with values less than the line width deviation. By applying the new PPC method to 0.25 micrometer logic gate patterns, a correction rule table was experimentally obtained. The new PPC mask fabricated with the correction rule exhibited a significant improvement over the conventional correction technique in the logic device.

Paper Details

Date Published: 29 June 1998
PDF: 10 pages
Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); doi: 10.1117/12.310752
Show Author Affiliations
Kohji Hashimoto, Toshiba Corp. (Japan)
Satoshi Usui, Toshiba Corp. (Japan)
Shigeru Hasebe, Toshiba Corp. (Japan)
Masayuki Murota, Toshiba Corp. (Japan)
Takeo Nakayama, Toshiba Corp. (Japan)
Fumitomo Matsuoka, Toshiba Corp. (Japan)
Soichi Inoue, Toshiba Corp. (Japan)
Sachiko Kobayashi, Toshiba Corp. (Japan)
Kazuko Yamamoto, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 3334:
Optical Microlithography XI
Luc Van den Hove, Editor(s)

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