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Proceedings Paper

Extension of the traditional optical model for investigation into EUV projection lithography capabilities
Author(s): Vladimir V. Ivin; Kevin D. Lucas; Tariel M. Makhviladze; Vadim V. Manuylov; Marina G. Medvedeva
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Paper Abstract

A traditional aerial image model has been used to demonstrate a good applicability of 13nm EUV projection lithography to printing sub-0.1mm features. To estimate the potential of a possible candidate for EUV optics--a two- mirror projection system, we investigated the issues of aerial image formation by the reflective optics with account for aberrations. We have developed a simplified method to determine the optical parameters of the ring-field system that minimize aberrations of the 3rd order and, partially, of the 5th. As a result, we have found that the uncompensated aberrations contribute to a sharply asymmetrical impulse response of the ring-field projection system, where the characteristic width of the impulse response in some directions might be two times larger than the diffraction limit.

Paper Details

Date Published: 5 June 1998
PDF: 9 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309628
Show Author Affiliations
Vladimir V. Ivin, SOFT-TEC (Russia)
Kevin D. Lucas, Motorola (Belgium)
Tariel M. Makhviladze, SOFT-TEC (Russia)
Vadim V. Manuylov, SOFT-TEC (United States)
Marina G. Medvedeva, SOFT-TEC (Russia)

Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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