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Proceedings Paper

Imaging interferometric lithography for arbitrary patterns
Author(s): Xiaolan Chen; Steven R. J. Brueck
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Paper Abstract

Conventional optical lithography (OL) is limited by the spatial frequency coverage of the optical system. Inter- ferometric lithography (IL), which approaches the ultimate linear system spatial frequency coverage limit of optics, provides a simple technique to produce periodic patterns at the requisite scale for the next several ULSI generations. Imaging interferometric lithography (IIL), a true integration of optical and interferometric lithography, extends this capability to arbitrary pattern fabrication. Modeling and simulation results show that arbitrary patterns with dense CDs extending to 120-nm at I-line and to 65-nm at a 193-nm exposure wavelength are possible. Initial experiments demonstrate that the coverage in frequency space is increased for a 3-exposure IIl configuration and the resolution is concomitantly increased by a factor of 3. Development of IIL may extend the life of optical lithography to sub-100-nm CD generations.

Paper Details

Date Published: 5 June 1998
PDF: 11 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309621
Show Author Affiliations
Xiaolan Chen, Univ. of New Mexico (United States)
Steven R. J. Brueck, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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