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Proceedings Paper

EUV optical design for a 100-nm CD imaging system
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Paper Abstract

The imaging specifications for extreme ultraviolet lithography (EUVL) projection optics parallel those of other optical lithographies. Specifications are scaled to reflect the 100 nm critical dimension for the first generation EUVL systems. The design being fabricated for the Engineering Test Stand, an EUVL alpha tool, consists of a condenser with six channels to provide an effective partial coherence factor of 0.7. The camera contains four mirrors; three of the mirrors are aspheres and the fourth is spherical. The design of the optical package has been constrained so that the angles of incidence and the variations in the angle of incidence of all rays allow for uniform multilayer coatings. The multilayers introduce a slight shift in image position and magnification. We have shown that a system aligned with visible light is also aligned at 13.4 nm. Each mirror must be fabricated with an RMS figure error of less than 0.25 nm and better than 0.2 nm RMS roughness. Optical surfaces that exceed each of these specifications individually have been fabricated. The success of EUVL requires that these specifications be met simultaneously. Keywords: EUV projection lithography, optical design, multilayer coatings, aspheric optics

Paper Details

Date Published: 5 June 1998
PDF: 9 pages
Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); doi: 10.1117/12.309559
Show Author Affiliations
Donald W. Sweeney, Lawrence Livermore National Lab. (United States)
Russell M. Hudyma, Lawrence Livermore National Lab. (United States)
Henry N. Chapman, Lawrence Livermore National Lab. (United States)
David Shafer, David Shafer Optical Design (United States)

Published in SPIE Proceedings Vol. 3331:
Emerging Lithographic Technologies II
Yuli Vladimirsky, Editor(s)

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