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Proceedings Paper

Pattern precision of excimer ablation lithography (EAL)
Author(s): Kenkichi Suzuki; Toshio Ogino; Takao Terabayashi; Kazutami Kawamoto; Hiroyuki Hirayama
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Paper Abstract

Differences between EAL and the conventional photolithography are mainly with respect to the resist materials and the mask. The mask consists of dielectric multilayer reflector, and the thickness and the structure are completely different from Cr masks. This paper is aimed to clarify the influences of dielectric mask to the image qualities, and presents a rigorous simulation of the diffraction by the dielectric mask and preliminary experimental results. These results show that for low N.A. imaging system, there are not substantial differences between the dielectric mask and the metal mask concerning the resolution power, however further investigations are required for the interpretation of rather wide resist edge corresponding to a straight edge of the large opening mask.

Paper Details

Date Published: 3 June 1998
PDF: 8 pages
Proc. SPIE 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III, (3 June 1998); doi: 10.1117/12.309517
Show Author Affiliations
Kenkichi Suzuki, Hitachi, Ltd. (Japan)
Toshio Ogino, Hitachi, Ltd. (Japan)
Takao Terabayashi, Hitachi, Ltd. (Japan)
Kazutami Kawamoto, Hitachi, Ltd. (Japan)
Hiroyuki Hirayama, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 3274:
Laser Applications in Microelectronic and Optoelectronic Manufacturing III
Jan J. Dubowski; Peter E. Dyer, Editor(s)

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