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Proceedings Paper

Ultralow-energy imaging for metrology
Author(s): David C. Joy
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Paper Abstract

Ultra-low energy (ULV) scanning electron microscopy is performed in the range between 20 eV and 100 eV. By the use of a retarding field cathode lens assembly ULV imaging with a spatial resolution in the nanometer range has been achieved. This performance is close the predicted theoretical value but is limited by astigmatism and signal to noise considerations. The modes of signal formation at ULV are well suited for metrology and this type of operation may offer reduced beam damage and charging artifacts.

Paper Details

Date Published: 8 June 1998
PDF: 9 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308753
Show Author Affiliations
David C. Joy, Univ. of Tennessee/Knoxville and Oak Ridge National Lab. (United States)

Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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