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Proceedings Paper

Manufacturability of subwavelength features using reticle and substrate enhancements
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Paper Abstract

This paper uses simulation and experiment to study near resolution limit patterning of contacts and damascene trenches using conventional i-line lithography. Special attention is paid to the requirements for substrate control. The patterning behavior is compared to DUV lithography results. We also evaluate the cost-of-process for an i-line process using substrate and optical enhancements compared to a standard 248 nm DUV process.

Paper Details

Date Published: 8 June 1998
PDF: 12 pages
Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); doi: 10.1117/12.308748
Show Author Affiliations
Martin McCallum, Motorola (UK) and SEMATECH (United States)
Kevin D. Lucas, Motorola (Belgium)
John G. Maltabes, Motorola (United States)
Michael E. Kling, Motorola (United States)

Published in SPIE Proceedings Vol. 3332:
Metrology, Inspection, and Process Control for Microlithography XII
Bhanwar Singh, Editor(s)

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