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Proceedings Paper

Subpicosecond optical studies of charge trapping and defect creation in wide-bandgap materials
Author(s): Guillaume Petite; C. Itoh; Philippe Martin; Stephane Guizard
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Paper Abstract

We discuss the study of the kinetic aspects of charge trapping and defect creation which result from the intense electronic excitation caused in wide bandgap dielectrics by an intense laser irradiation. Because of the ultrashort time constants of such processes, they can only be studied using intense subpicosecond laser sources. More precisely, we present the results obtained in a number of optical material using a special interferometric measurement of the instantaneous refractive index, which allows to determine whether the photoinjected carriers are still in the conduction band or trapped in the deep defect states. Different types of materials (oxides and alkali halides) supporting excitonic charge trapping are studied, and a number of effects of the experimental conditions (in particular: excitation density and charge trapping impurity content) are described.

Paper Details

Date Published: 26 May 1998
PDF: 8 pages
Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); doi: 10.1117/12.308608
Show Author Affiliations
Guillaume Petite, CEA Saclay (France)
C. Itoh, Nagoya Univ. (Japan)
Philippe Martin, CEA Saclay (France)
Stephane Guizard, CEA Saclay (France)

Published in SPIE Proceedings Vol. 3404:
ALT'97 International Conference on Laser Surface Processing
Vladimir I. Pustovoy, Editor(s)

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