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Proceedings Paper

650-nm-band high-power and highly reliable laser diodes with a window-mirror structure
Author(s): Akihiro Shima; Misao Hironaka; Ken-ichi Ono; Masayoshi Takemi; Yoshifumi Sakamoto; Yasuhiro Kunitsugu; Koji Yamashita
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Paper Abstract

An active layer structure with 658 nm-emission at 25 degrees Celsius has been optimized in order to reduce the operating current of the laser diodes (LD) under high temperature condition. For improvement of the maximum output power and the reliability limited by mirror degradation, we have applied a zinc-diffused-type window-mirror structure which prevents the optical absorption at the mirror facet. As a result, the CW output power of 50 mW is obtained even at 80 degrees Celsius for a 650 micrometer-long window-mirror LD. In addition, the maximum light output power over 150 mW at 25 degrees Celsius has been realized without any optical mirror damage. In the aging tests, the LDs have been operating for over 2,500 - 5,000 hours under the CW condition of 30 - 50 mW at 60 degrees Celsius. The window-mirror structure also enables reliable 60 degree Celsius, 30 mW, CW operation of the LDs with 651 nm- emission at 25 degrees Celsius. Moreover, the maximum output power of around 100 mW even at 80 degrees Celsius and reliable 2,000-hour operation at 60 degrees Celsius, 70 mW have been realized for the first time by 659 nm LDs with a long cavity length of 900 micrometers.

Paper Details

Date Published: 4 May 1998
PDF: 9 pages
Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); doi: 10.1117/12.307613
Show Author Affiliations
Akihiro Shima, Mitsubishi Electric Corp. (Japan)
Misao Hironaka, Mitsubishi Electric Corp. (Japan)
Ken-ichi Ono, Mitsubishi Electric Corp. (Japan)
Masayoshi Takemi, Mitsubishi Electric Corp. (Japan)
Yoshifumi Sakamoto, Mitsubishi Electric Corp. (Japan)
Yasuhiro Kunitsugu, Mitsubishi Electric Corp. (Japan)
Koji Yamashita, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 3285:
Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III
Kurt J. Linden; Mahmoud Fallahi; Kurt J. Linden; S. C. Wang, Editor(s)

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