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Proceedings Paper

Epitaxial growth of n- and p-type ZnCdSe layers and light-emitting diodes
Author(s): Hiroshi Iwata; Koichi Naniwae; Kenichiro Yashiki
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Paper Abstract

Zn0.48Cd0.52Se layers were grown on InP substrates by molecular-beam epitaxy. The n-type carrier concentration was controlled from 3X1016 cm-3 to 7X1018 cm-3 through the ZnCl2 source cell temperature. Nitrogen doping was performed using a radio-frequency plasma. Capacitance-voltage measurement showed that the ZnCdSe:N layer was p-type with a net acceptor concentration (Na-Nd) of 3.5X1016 cm-3. ZnCdSe p-n homojunction light- emitting diodes (LEDs) was fabricated. Orange luminescence intensity peaking at a wavelength of 590 nm was observed at room temperature. Double-heterostructure LEDs with a ZnSeTe contact layer were also fabricated and a higher luminescence intensity than in the homojunction LEDs was observed. The operating voltage ranged from 15 to 20 volts.

Paper Details

Date Published: 4 May 1998
PDF: 7 pages
Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); doi: 10.1117/12.307611
Show Author Affiliations
Hiroshi Iwata, NEC Corp. (Japan)
Koichi Naniwae, NEC Corp. (Japan)
Kenichiro Yashiki, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3285:
Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III
Kurt J. Linden; Mahmoud Fallahi; Kurt J. Linden; S. C. Wang, Editor(s)

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