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Proceedings Paper

Ultrafast carrier dynamics near a Si surface: a reflective transient grating study
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Paper Abstract

Reflective transient grating experiments were conducted using two different experimental configurations to study carrier dynamics. Using an 800 nm pump and 400 nm probe, a signal attributed to bleaching was observed, and the carrier energy relaxation time was measured to be approximately 600 fs. Experiments were also conducted with a 400 nm pump and 800 nm pump. For this configuration, the observed TG signal decay was attributed to carrier diffusion and recombination.

Paper Details

Date Published: 30 April 1998
PDF: 10 pages
Proc. SPIE 3272, Laser Techniques for Surface Science III, (30 April 1998); doi: 10.1117/12.307145
Show Author Affiliations
Theodore A. Sjodin, Univ. of Pennsylvania (United States)
Hai-Lung Dai, Univ. of Pennsylvania (United States)
Hrvoje Petek, Hitachi Ltd. (Japan)

Published in SPIE Proceedings Vol. 3272:
Laser Techniques for Surface Science III
Hai-Lung Dai; Hans-Joachim Freund, Editor(s)

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