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Proceedings Paper

Fundamental mechanisms causing dielectric breakdown in the picosecond and femtosecond time range
Author(s): Peter P. Pronko; Paul A. VanRompay; Xin Bing Liu; Gerard A. Mourou
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Paper Abstract

The technique of chirped pulse amplification makes possible the investigation of dielectric breakdown as a function of pulse duration over a continuous regime of pulse duration from the 100 ps to the tens of fs and for material with bandgap varying from the single eV to several eV. This study leads to the surprising result that even for 100 fs pulses the dielectric breakdown is dominated by impact ionization even in the case of single photon absorption. For larger bandgap the seeding of the avalanche is produced by multiphoton ionization. This makes possible for the first time the direct determination of the electron ionization rate in important electronic materials like silicon as a function of the electric field up to 2 108 V/an which is impossible by conventional electronic means.

Paper Details

Date Published: 20 April 1998
PDF: 3 pages
Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); doi: 10.1117/12.307040
Show Author Affiliations
Peter P. Pronko, Univ. of Michigan (United States)
Paul A. VanRompay, Univ. of Michigan (United States)
Xin Bing Liu, Univ. of Michigan (United States)
Gerard A. Mourou, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 3244:
Laser-Induced Damage in Optical Materials: 1997
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; M. J. Soileau, Editor(s)

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