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Proceedings Paper

High-speed measurements of solid state plasma excitation and recombination processes using microwave and laser radiation
Author(s): Serge V. Garnov; A. I. Ritus; Sergei M. Klimentov; Sergej M. Pimenov; Vitali I. Konov; S. Gloor; Willy A.R. Luethy; Heinz P. Weber
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Paper Abstract

Ultra-fast processes of recombination of free charge carriers optically generated in natural and chemical vapor deposited (CVD) diamond materials; GaAs and Si, were investigated with a 1 nanosecond time resolution by applying a developed microwave-radiation-based technique. Time-dependent responses of reflection and transmission of 2 mm wavelength electromagnetic CW-radiation were recorded when the tested specimens were irradiated by single laser pulses of IR, visible and UV spectral range. A waveguide configuration was used to measure the exponential fall of the reflection/transmission signals corresponding to the recombination times of free carriers. Depending on the material, impurity contamination and laser wavelength, the measured signals were varied from a few to several hundred nanoseconds. The measured recombination times in the bulk of natural and CVD diamond specimens were found to be of 2-4 ns. The distinguished difference between the surface and bulk recombination times was clearly demonstrate in the case of GaAs and Si. Applicability and relevance of the applied technique to non-equilibrium carrier lifetimes measurements and the validity of the result obtained are discussed and confirmed on the base of the analytical analysis of the time- dependent microwave radiation reflection/transmission in a solid excited with high intense laser pulses.

Paper Details

Date Published: 20 April 1998
PDF: 10 pages
Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); doi: 10.1117/12.306982
Show Author Affiliations
Serge V. Garnov, General Physics Institute (Russia)
A. I. Ritus, General Physics Institute (Russia)
Sergei M. Klimentov, General Physics Institute (Russia)
Sergej M. Pimenov, General Physics Institute (Russia)
Vitali I. Konov, General Physics Institute (Russia)
S. Gloor, Institute of Applied Physics (Switzerland)
Willy A.R. Luethy, Institute of Applied Physics (Switzerland)
Heinz P. Weber, Institute of Applied Physics (Switzerland)

Published in SPIE Proceedings Vol. 3244:
Laser-Induced Damage in Optical Materials: 1997
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; M. J. Soileau, Editor(s)

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